- Akhil AJAY (Walter Schottky Institute TUM, Germany)
Highly uniform non-VLS GaAsSb nanowires with unprecedented aspect ratios
- Thomas AUZELLE (Paul DRUDE Institut Berlin, Germany)
Nonradiative recombination in GaN nanowires: the effect of surface electric fields
- Joe BRISCOE (Queen Mary University of London, UK)
Sustainable energy devices using polar nanomaterials
- Andrea CATTONI (Centre de Nanosciences et Nanotechnologies, France)
Selective-area growth of III-V nanowire arrays on Si and their application for Tandem solar cells
- Michele CERIOTTI (EPFL Lausane, Switzerland)
Atomistic modeling of the Ga/As binary system with a machine-learning potential
- Sergey FROLOV (University of Pittsburgh, USA)
Hybrid superconductor-semiconductor nanowire quantum devices
- Jos HAVERKORT (Eindhoven University of Technology, Netherland)
Towards a hexagonal SiGe nanowire laser
- Katarzyna HNIDA-GUT (IBM Zurich, Switzerland)
Templated epitaxial growth and synthesis of III-V nanostructures on silicon
- Michael Filler (Georgia Institute of Technology, USA)
Programming Semiconductor Nanowire Composition with Sub–100-nm Resolution via the Geode Process
- Hanna JOYCE (University of Cambridge, UK)
Growth and integration strategies for III–V nanowire-based devices
- Jesper NYGARD (University of Copenhagen, Denmark)
Superconductor-semiconductor nanowires;in situ fabrication schemes and new materials for hybrid quantum devices
- Stefano RODDARO (Pisa University, Italy)
Orbital configurations in nanowire single-electron systems: control and applications
- Marco VALENTINI (Institut of Science and Technology, Austria)
Nontopological zero-bias peaks in full-shell nanowires
- Laetitia VINCENT (Centre de Nanosciences et Nanotechnologies, France)
Real time TEM observation of epitaxial hexagonal germanium Ge-2H growth
